PART |
Description |
Maker |
Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器,红外Lumineszenzdiode GaAlA红外发射 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SFH460 |
GaAlAs-Lumineszenzdiode
|
OSRAM GmbH
|
Q65110A2741 SFH722112 |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
|
OSRAM GmbH
|
124141 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
126284 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
136144 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
127141N |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳 GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG SIEMENS A G
|
Q62703Q0517 |
GaAIAs-IR-Lumineszenzdiode (880 nm)
|
OSRAM GmbH
|
SFH4110 Q62702P5072 |
GaAs-IR-Lumineszenzdiode (Mini Sidelooker)
|
OSRAM GmbH
|
Q65110A2464 Q65110A2975 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
|
OSRAM GmbH
|